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Datasheets for 19AB

Datasheets found :: 21
Page: | 1 |
No. Part Name Description Manufacturer
1 1819AB12 12 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
2 1819AB25 25 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
3 1819AB35 35 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
4 1819AB4 4 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
5 25A19ABG0 Selenium Transient Voltage Suppressors, Phenolic tube types, WIRE LEAD ITT Semiconductors
6 25A19ABG19 Selenium Transient Voltage Suppressors, Phenolic tube types, wire lead ITT Semiconductors
7 8A19ABG0 Selenium Transient Voltage Suppressors, Phenolic tube types, WIRE LEAD ITT Semiconductors
8 8A19ABG19 Selenium Transient Voltage Suppressors, Phenolic tube types, wire lead ITT Semiconductors
9 GS88219AB-133 133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
10 GS88219AB-133I 133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
11 GS88219AB-150 150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
12 GS88219AB-150I 150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
13 GS88219AB-166 166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
14 GS88219AB-166I 166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
15 GS88219AB-200 200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
16 GS88219AB-200I 200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
17 GS88219AB-225 225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
18 GS88219AB-225I 225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
19 GS88219AB-250 250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
20 GS88219AB-250I 250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM GSI Technology
21 R1221N19AB-TR Step-down DC/DC converter with voltage detector. Output voltage (Vout) 1.9V. Detector threshold (-Vdet) 3.0V. Oscillator frequency 500kHz Ricoh


Datasheets found :: 21
Page: | 1 |



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