No. |
Part Name |
Description |
Manufacturer |
1 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
2 |
D1A12 |
1A 1200V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
3 |
IGB01N120H2E3045A |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak |
Infineon |
4 |
IGD01N120H2 |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak |
Infineon |
5 |
IGP01N120H2 |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220 |
Infineon |
6 |
IKB01N120H2E3045A |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak |
Infineon |
7 |
IKP01N120H2 |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT TO220 |
Infineon |
8 |
RFL1N12 |
1A 120V AND 150V 1.9 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
9 |
RFL1N15 |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
10 |
RFL1N15L |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
11 |
RFL1N20 |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
12 |
RFL1N20L |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
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