| No. |
Part Name |
Description |
Manufacturer |
| 1 |
101S3AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 2 |
101S3AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 3 |
101S3EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 4 |
101S3EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5 |
1S3 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 6 |
1S3 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 7 |
1S30 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 8 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 9 |
1S30 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 10 |
1S300 |
Silicon junction zener diode 10W 120V |
TOSHIBA |
| 11 |
1S301 |
Zener diode |
TOSHIBA |
| 12 |
1S301 |
Silicon junction zener diode 10W 130V |
TOSHIBA |
| 13 |
1S302 |
Zener diode |
TOSHIBA |
| 14 |
1S302 |
Silicon junction zener diode 10W 140V |
TOSHIBA |
| 15 |
1S303 |
Zener diode |
TOSHIBA |
| 16 |
1S303 |
Silicon junction zener diode 10W 150V |
TOSHIBA |
| 17 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 18 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 19 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 20 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 21 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 22 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 23 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 24 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 25 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 26 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 27 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 28 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 29 |
1S32 |
General-purpose detector diode |
TOSHIBA |
| 30 |
1S32 |
Germanium point contact diode |
TOSHIBA |
| | | |
