| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE160CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 152.0 V(min), 168.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE170A |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 179.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1.5KE170CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 179.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1.5KE180 |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 198.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
1.5KE180C |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 198.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
1.5KE220 |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 7 |
1.5KE220C |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 8 |
1.5KE440CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 418.0 V(min), 462.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 9 |
10D05 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 10 |
10D1 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 11 |
10D10 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 12 |
10D2 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 13 |
10D4 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 14 |
10D6 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 15 |
10D8 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 16 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 17 |
15KP200C |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 18 |
1N4615UR-1 |
2.0 volt zener diode |
Compensated Devices Incorporated |
| 19 |
1N4742 |
1 W silicon zener diode. Nominal zener voltage 12.0 V. |
Fairchild Semiconductor |
| 20 |
1N4748 |
1 W silicon zener diode. Nominal zener voltage 22.0 V. |
Fairchild Semiconductor |
| 21 |
1N4816 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 22 |
1N4817 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 23 |
1N4818 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 24 |
1N4819 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 25 |
1N4820 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 26 |
1N4821 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 27 |
1N5052 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 28 |
1N5053 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 29 |
1N5054 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 30 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| | | |
