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Datasheets for 20.0

Datasheets found :: 422
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1.5KE200 Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
2 1.5KE200C Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
3 1.5KE400CA Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
4 15KW220 220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
5 15KW220A 220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
6 1N4188B 120.0V Professional Grade 1 W Zener Diode Continental Device India Limited
7 1N4747 20.0V Professional Grade 1 W Zener Diode Continental Device India Limited
8 1N4747 1 W silicon zener diode. Nominal zener voltage 20.0 V. Fairchild Semiconductor
9 1N4747A 20.0V Professional Grade 1 W Zener Diode Continental Device India Limited
10 1N5250 500 mW silicon zener diode. Nominal zener voltage 20.0 V. Fairchild Semiconductor
11 1N5250B 20.0V 500 mW Zener Diode Continental Device India Limited
12 1N5540A 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. Jinan Gude Electronic Device
13 1N5540B 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. Jinan Gude Electronic Device
14 1N5743B 20.0V Voltage Reference Diode Philips
15 1N914B 500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If Continental Device India Limited
16 1N968 20.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
17 1N968 500 mW silicon planar zener diode. Max zener voltage 20.0 V. Fairchild Semiconductor
18 1N968A 20.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
19 1N968B 20.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
20 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
21 20KW120 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
22 20KW120A 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
23 2N3772 150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. Continental Device India Limited
24 30KW120 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
25 30KW120A 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
26 5KP120 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
27 5KP120A 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
28 BD157 20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. Continental Device India Limited
29 BD158 20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Continental Device India Limited
30 BD159 20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. Continental Device India Limited


Datasheets found :: 422
Page: | 1 | 2 | 3 | 4 | 5 |



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