No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE200 |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
2 |
1.5KE200C |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
3 |
1.5KE400CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
4 |
15KW220 |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
5 |
15KW220A |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
6 |
1N4188B |
120.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
7 |
1N4747 |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
8 |
1N4747 |
1 W silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
9 |
1N4747A |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
10 |
1N5250 |
500 mW silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
11 |
1N5250B |
20.0V 500 mW Zener Diode |
Continental Device India Limited |
12 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
13 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
14 |
1N5743B |
20.0V Voltage Reference Diode |
Philips |
15 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
16 |
1N968 |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
17 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
18 |
1N968A |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
19 |
1N968B |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
20 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
21 |
20KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
22 |
20KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
23 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
24 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
25 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
26 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
27 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
28 |
BD157 |
20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
29 |
BD158 |
20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
30 |
BD159 |
20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
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