| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CDD120N12 |
Diode-Diode Modules |
etc |
| 2 |
FGA20N120FTD |
1200V, 20A, Field Stop Trench IGBT |
Fairchild Semiconductor |
| 3 |
HGTG20N120 |
34A/ 1200V N-Channel IGBT |
Intersil |
| 4 |
HGTG20N120C3D |
45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 5 |
HGTG20N120CN |
63A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 6 |
HGTG20N120CN |
63A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 7 |
HGTG20N120CND |
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 8 |
HGTG20N120CND |
63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 9 |
HGTG20N120E2 |
34A/ 1200V N-Channel IGBT |
Intersil |
| 10 |
IXDA20N120AS |
IGBT Discretes: NPT IGBT |
IXYS |
| 11 |
IXDH20N120 |
IGBT Discretes: NPT IGBT |
IXYS |
| 12 |
IXDH20N120 |
High Voltage IGBT with optional Diode |
IXYS Corporation |
| 13 |
IXDH20N120D1 |
IGBT Discretes: NPT IGBT |
IXYS |
| 14 |
IXDH20N120D1 |
High Voltage IGBT with optional Diode |
IXYS Corporation |
| 15 |
IXFK20N120 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 16 |
IXFN20N120 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 17 |
IXFX20N120 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 18 |
IXGA20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 19 |
IXGH20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 20 |
IXGH20N120B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 21 |
IXGP20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 22 |
IXGQ20N120B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 23 |
IXGT20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 24 |
IXGT20N120B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 25 |
MGW20N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 26 |
MGW20N120 |
OBSOLETE - Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 27 |
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 28 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 29 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 30 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| | | |
