Datasheets for 21030

Datasheets found :: 24 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	LET21030C	RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY	SGS Thomson Microelectronics
2	LET21030C	RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY	ST Microelectronics
3	MCT210300	6-Pin DIP Phototransistor Output Optocoupler	Fairchild Semiconductor
4	MCT210300W	6-Pin DIP Phototransistor Output Optocoupler	Fairchild Semiconductor
5	MCT5210300	6-Pin DIP Low Current Input Phototransistor Output Optocoupler	Fairchild Semiconductor
6	MCT5210300W	6-Pin DIP Low Current Input Phototransistor Output Optocoupler	Fairchild Semiconductor
7	MRF21030	MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
8	MRF21030	MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
9	MRF21030	MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
10	MRF21030	MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
11	MRF21030	MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
12	MRF21030D	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS	Motorola
13	MRF21030D	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS	Motorola
14	MRF21030LR3	2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET	Freescale (Motorola)
15	MRF21030LSR3	2.2 GHz, 30 W, 28 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
16	MRF21030R3	2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET	Freescale (Motorola)
17	MRF21030R3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS	Motorola
18	MRF21030SR3	2.2 GHz, 30 W, 28 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
19	MRF21030SR3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS	Motorola
20	PTF210301	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
21	PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
22	PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
23	R6221030	Fast Recovery Rectifier (300 Amperes Average 1600 Volts)	Powerex Power Semiconductors
24	R6221030PS	1000V, 300A fast recovery single diode	Powerex Power Semiconductors

Datasheets found :: 24 Page: | 1 |