| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1210E |
1000 V single phase bridge 3.0 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 2 |
1210E104XXX |
CERAMIC MULTILAYER CAPACITORS |
NOVACAP |
| 3 |
A210E,K |
6W Low Frequency amplifier, possibly equivalent TBA810AS |
RFT |
| 4 |
A3210ELH |
Micropower, ultra-sensitive hall-effect switch |
Allegro MicroSystems |
| 5 |
A3210EUA |
Micropower, ultra-sensitive hall-effect switch |
Allegro MicroSystems |
| 6 |
A3210EUA-LC |
Micropower, ultra-sensitive hall-effect switch |
Allegro MicroSystems |
| 7 |
A3210EUA-TL |
MICROPOWER/ ULTRA-SENSITIVE HALL-EFFECT SWITCHES |
Allegro MicroSystems |
| 8 |
ADXL210EB |
±10 g Dual Axis Accelerometer with Duty Cycle Outputs |
Analog Devices |
| 9 |
AQV210E |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 10 |
AQV210EA |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 11 |
AQV210EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 12 |
AQV210EAZ |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 13 |
AQV210EH |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 14 |
AQV210EHA |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 15 |
AQV210EHAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 16 |
AQV210EHAZ |
GU (General Use)-E Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
| 17 |
AQW210EH |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
| 18 |
AQW210EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. |
Matsushita Electric Works(Nais) |
| 19 |
AQW210EHAX |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 20 |
AQW210EHAZ |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 21 |
AQY210EH |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 22 |
AQY210EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 23 |
AQY210EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 24 |
AQY210EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 25 |
CS16210 |
CS16210EP |
etc |
| 26 |
CS16210EP |
CS16210EP |
etc |
| 27 |
CS16210EP |
CS16210EP |
etc |
| 28 |
IL91210EN |
TONE/PULSEDIALER |
INTEGRAL |
| 29 |
IN91210EN |
Tone/pulse dialer, high-performance silicon-gate CMOS |
INTEGRAL |
| 30 |
KRX210E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| | | |
