| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 2 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 3 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 6 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 7 |
ASI2223-12 |
NPN silicon RF power transistor |
Advanced Semiconductor |
| 8 |
TCC2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 9 |
TCC2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| | | |
