| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2327 |
Silicon Signal Diode |
Motorola |
| 2 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 3 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 4 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 5 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 6 |
2N2327 |
Leaded Thyristor SCR |
Central Semiconductor |
| 7 |
2N2327 |
Silicon Controlled Rectifier |
Microsemi |
| 8 |
2N2327 |
THYRISTOR |
Motorola |
| 9 |
2N2327 |
Thyristor SCR 250V 15A 3-Pin TO-39 |
New Jersey Semiconductor |
| 10 |
2N2327 |
Thyristors - normal series |
SESCOSEM |
| 11 |
2N2327 |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
| 12 |
2N2327A |
Silicon Controlled Rectifier |
Microsemi |
| 13 |
2N2327A |
THYRISTOR |
Motorola |
| 14 |
2N2327A |
Thyristor SCR 250V 15A 3-Pin TO-39 |
New Jersey Semiconductor |
| 15 |
2N2327A |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
| 16 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 17 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 18 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 19 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 20 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 21 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 22 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 23 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 24 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 25 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 26 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 27 |
HYMD232726A(L)8-H |
DDR SDRAM - Unbuffered DIMM 256MB |
Hynix Semiconductor |
| 28 |
HYMD232726A(L)8-K |
DDR SDRAM - Unbuffered DIMM 256MB |
Hynix Semiconductor |
| 29 |
HYMD232726A(L)8-L |
DDR SDRAM - Unbuffered DIMM 256MB |
Hynix Semiconductor |
| 30 |
HYMD232726A(L)8-M |
DDR SDRAM - Unbuffered DIMM 256MB |
Hynix Semiconductor |
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