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Datasheets found :: 2068 Page: | 1 | 2 | 3 | 4 | 5 |
Nr. Part Name Description Manufacturer
1 125NQ015 15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
2 125NQ015 Schottky Rectifier Microsemi
3 125NQ015R 15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
4 489D686X025N32V Resin-Coated, Radial-Lead Solid Tantalum Capacitors Vishay
5 516D477M025NR6A Aluminum Capacitors + 85C, Miniature, Axial Lead Vishay
6 5962-0151101QXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none Aeroflex Circuit Technology
7 5962-0151101TXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none Aeroflex Circuit Technology
8 5962-0153201QYA 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. Aeroflex Circuit Technology
9 5962-0153201QYC 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. Aeroflex Circuit Technology
10 5962-0153201QYX 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. Aeroflex Circuit Technology
11 5962-0153201TYA 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hold solder dipped. Total dose none. Aeroflex Circuit Technology
12 5962-0153201TYC 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none. Aeroflex Circuit Technology
13 5962-0153201TYX 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. Aeroflex Circuit Technology
14 5962-0153301QXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. Aeroflex Circuit Technology
15 5962-0153301TXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none Aeroflex Circuit Technology
16 5962-87539013X t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
17 5962-8753901LA t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
18 5962-87539053X t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
19 5962-8753905LA t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
20 5962-88670013X t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
21 5962-8867001LA t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
22 5962-88670053X t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
23 5962-8867005LA t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
24 5962-88724013X t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
25 5962-8872401LA t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
26 5962-89755013X t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
27 5962-8975501LA t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
28 5962D0053601QUA 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). Aeroflex Circuit Technology
29 5962D0053601QUC 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). Aeroflex Circuit Technology
30 5962D0053601QUX 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). Aeroflex Circuit Technology


Datasheets found :: 2068 Page: | 1 | 2 | 3 | 4 | 5 |


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