| No. |
Part Name |
Description |
Manufacturer |
| 1 |
7220 |
T-1 subminiature, wire lead lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 2 |
7241 |
T-1 subminiature, miniature flanged lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 3 |
8099 |
T-1 subminiature, bi-pin lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 4 |
AN122 |
DTS User's Guide for The CS4926 and CS4928 |
Cirrus Logic |
| 5 |
AN158 |
Measuring High Voltages (5 to 1,000 Volts) with the CS5521/22/23/24/28 and CS5525/26 A/D Converters |
Cirrus Logic |
| 6 |
AUIRF7759L2 |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 7 |
AUIRF7759L2TR1 |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 8 |
DS2164Q |
G.726 ADPCM Processor |
MAXIM - Dallas Semiconductor |
| 9 |
DS2164Q+ |
G.726 ADPCM Processor |
MAXIM - Dallas Semiconductor |
| 10 |
DS2164Q+T&R |
G.726 ADPCM Processor |
MAXIM - Dallas Semiconductor |
| 11 |
IRF6641 |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes. |
International Rectifier |
| 12 |
IRF6641TR1 |
Leaded A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes. |
International Rectifier |
| 13 |
IRF6641TR1PBF |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes. |
International Rectifier |
| 14 |
IRF7759L2 |
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 15 |
IRF7759L2TR1PBF |
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 16 |
IRF7759L2TRPBF |
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 17 |
MAX16126EVKIT |
Evaluation Kits for the MAX16126 and MAX16127 |
MAXIM - Dallas Semiconductor |
| 18 |
MAX16126EVKIT# |
Evaluation Kits for the MAX16126 and MAX16127 |
MAXIM - Dallas Semiconductor |
| 19 |
MAX16127EVKIT |
Evaluation Kits for the MAX16126 and MAX16127 |
MAXIM - Dallas Semiconductor |
| 20 |
MAX16127EVKIT# |
Evaluation Kits for the MAX16126 and MAX16127 |
MAXIM - Dallas Semiconductor |
| 21 |
MTW26N15E |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
Motorola |
| 22 |
NVMFS5826NL |
Power MOSFET, 60 V, 26 A, 24 mΩ, Single N-Channel |
ON Semiconductor |
| 23 |
PB-IRF6641 |
Leaded A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes. |
International Rectifier |
| 24 |
RW |
Vitreous Wirewound Resistors, All welded construction, Ceramic core, Models acc.MIL-R-26 available, Complete vitreous coating for perfect humidity protection, Adjustable and non inductive design available, TC 100...180ppm/K |
Vishay |
| 25 |
SPD26N06S2L-35 |
Low Voltage MOSFETs - DPAK; 26 A; 55V; LL; 35mOhm |
Infineon |
| 26 |
STB33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
| 27 |
STF33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
| 28 |
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package |
ST Microelectronics |
| 29 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
| 30 |
STS26N3LLH6 |
N-channel 30 V, 0.0038 Ohm, 26 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
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