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Datasheets found :: 17 Page: | 1 |
Nr. Part Name Description Manufacturer
1 2SC2669 Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications TOSHIBA
2 2SK2669 Power MOSFETs / HVX-II Series (Three Terminal Type) Shindengen
3 ASM3P2669 Low Power Peak EMI Reducing Solution ON Semiconductor
4 ASM3P2669AF-06OR 3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution Alliance Semiconductor
5 ASM3P2669AF-08SR 3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution Alliance Semiconductor
6 ASM3P2669AF-08ST 3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution Alliance Semiconductor
7 ASM3P2669AF-08TR 3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution Alliance Semiconductor
8 ASM3P2669AF-08TT 3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution Alliance Semiconductor
9 KSC2669 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
10 KSC2669 NPN (FM RADIO RF AMP/ MIX/ CONV/ OSC/ IF AMP) Samsung Electronic
11 KSC2669OBU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
12 KSC2669YTA NPN Epitaxial Silicon Transistor Fairchild Semiconductor
13 MAX2669 GPS/GNSS Ultra-Low-Noise-Figure LNAs MAXIM - Dallas Semiconductor
14 MAX2669EVKIT+ GPS/GNSS Ultra-Low-Noise-Figure LNAs MAXIM - Dallas Semiconductor
15 MAX2669EWT+ GPS/GNSS Ultra-Low-Noise-Figure LNAs MAXIM - Dallas Semiconductor
16 MAX2669EWT+T GPS/GNSS Ultra-Low-Noise-Figure LNAs MAXIM - Dallas Semiconductor
17 NB2669A Low Power, Reduced EMI Clock Synthesizer ON Semiconductor


Datasheets found :: 17 Page: | 1 |


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