| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 2 |
2N2716 |
Silicon NPN Transistor |
Motorola |
| 3 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 4 |
AM2716B |
(AM2732B) 2048 x 8 Bit EPROM |
Advanced Micro Devices |
| 5 |
APE12716 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
| 6 |
BC32716 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7 |
BC32716BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8 |
BC32716TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 9 |
BC32716TAR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 10 |
BC32716TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 11 |
BC32716TFR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12 |
BGA2716 |
MMIC wideband amplifier |
NXP Semiconductors |
| 13 |
BGA2716 |
BGA2716; MMIC wideband amplifier |
Philips |
| 14 |
BGA2716 |
BGA2716; MMIC wideband amplifier |
Philips |
| 15 |
BGA2716 |
MMIC wideband amplifier |
Philips |
| 16 |
CXP82716 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 17 |
D2716 |
(M2716) 16K UV Erasable PROM |
Intel |
| 18 |
D2716 |
(M2716) 16K UV Erasable PROM |
Intel |
| 19 |
DZ27160 |
Zener Diodes |
Panasonic |
| 20 |
DZ2716000L |
Zener Diodes |
Panasonic |
| 21 |
ETC2716 |
16K BIT CMOS UV ERASABLE PROM |
ST Microelectronics |
| 22 |
ETC2716Q |
16K BIT CMOS UV ERASABLE PROM |
ST Microelectronics |
| 23 |
HN462716 |
2048 word x 8 Bit UV Erasable and EPROM |
Hitachi Semiconductor |
| 24 |
HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
Hitachi Semiconductor |
| 25 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
| 26 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 27 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 28 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 29 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 30 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| | | |
