| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N4123 |
General Purpose NPN Transistor |
CCSIT-CE |
| 2 |
2N4123 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3 |
2N4123 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 4 |
2N4123 |
General purpose NPN transistor |
FERRANTI |
| 5 |
2N4123 |
Low Noise NPN Transistor |
FERRANTI |
| 6 |
2N4123 |
Switching NPN transistor |
FERRANTI |
| 7 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
| 8 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 9 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 10 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 11 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 12 |
2N4123 |
NPN silicon transistor |
Motorola |
| 13 |
2N4123 |
Silicon NPN Transistor |
Motorola |
| 14 |
2N4123 |
NPN Silicon Transistor |
NEC |
| 15 |
2N4123 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 16 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 17 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 18 |
2N4123-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 19 |
2N4123BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 20 |
2N4123RLRA |
General Purpose Transistor - NPN |
ON Semiconductor |
| 21 |
2N4123RLRM |
General Purpose Transistor - NPN |
ON Semiconductor |
| 22 |
2N4123TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 23 |
2N4123TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 24 |
2N4123TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 25 |
2N4123TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| | | |
