| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 2 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 3 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 4 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 5 |
2N6109 |
PNP power transistor |
FERRANTI |
| 6 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| 7 |
2N6109 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
| 8 |
2N6109 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
| 9 |
2N6109 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 10 |
2N6109 |
Power 7A 50V Discrete PNP |
ON Semiconductor |
| 11 |
2N6109 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 12 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 13 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
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