No. |
Part Name |
Description |
Manufacturer |
1 |
2N612 |
Germanium PNP Transistor |
Motorola |
2 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
3 |
2N6121 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
5 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
6 |
2N6121 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
7 |
2N6121 |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
8 |
2N6121 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
9 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
10 |
2N6121A |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
11 |
2N6121B |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
12 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
13 |
2N6122 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
14 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
15 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
16 |
2N6122 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
17 |
2N6122 |
Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
18 |
2N6122 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
19 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
20 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
21 |
2N6123 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
22 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
23 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
24 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
25 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
26 |
2N6123 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
27 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
28 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
29 |
2N6124 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
30 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
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