| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2 |
2N6123 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 4 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
| 5 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 6 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
| 7 |
2N6123 |
NPN Power Transistor TO-220 |
National Semiconductor |
| 8 |
2N6123 |
NPN Power Transistor |
National Semiconductor |
| 9 |
2N6123 |
NPN silicon power transistor |
National Semiconductor |
| 10 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 11 |
2N6123 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 12 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 13 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| | | |
