No. |
Part Name |
Description |
Manufacturer |
1 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
2 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
3 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
4 |
2N6517 |
Ic=500mA, Vce=10V transistor |
MCC |
5 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
6 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
7 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
8 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
9 |
2N6517 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
10 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
14 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
15 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
16 |
H2N6517 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
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