| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA50 |
High-Speed Switching Transistor |
TOSHIBA |
| 2 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 3 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 4 |
2SA503 |
Silicon PNP epitaxial high frequency transistor |
TOSHIBA |
| 5 |
2SA504 |
Silicon PNP epitaxial high frequency transistor |
TOSHIBA |
| 6 |
2SA505 |
Silicon PNP epitaxial planar type |
New Jersey Semiconductor |
| 7 |
2SA505 |
SILICON PNP EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 8 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 9 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 10 |
2SA510 |
SILICON PNP EPITAXIAL TYPE |
TOSHIBA |
| 11 |
2SA512 |
SILICON PNP EPITAXIAL TYPE |
TOSHIBA |
| 12 |
2SA52 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 13 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
| 14 |
2SA52 |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR |
Unknow |
| 15 |
2SA53 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 16 |
2SA53 |
Germanium PNP alloy junction transistor |
TOSHIBA |
| 17 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 18 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 19 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 20 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 21 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 22 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 23 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 24 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 25 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 26 |
2SA561 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 27 |
2SA561 |
Silicon PNP epitaxial planar transistor, complementary to 2SC734 |
TOSHIBA |
| 28 |
2SA562 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 29 |
2SA562 |
TO-92 Plastic-Encapsulate Transistors |
Unknow |
| 30 |
2SA562-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| | | |
