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Datasheets for 30.

Datasheets found :: 427
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No. Part Name Description Manufacturer
1 1.5KE160 130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
2 1.5KE160C 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. Bytes
3 1.5KE300C Transient voltage suppressor. 1500 W. Breakdown voltage 270.0 V(min), 330.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
4 1.5KE36A-G Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=30.8V, Tolerance=5% Comchip Technology
5 1.5KE36A-HF Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=30.8V, Tolerance=5% Comchip Technology
6 1.5KE36CA-G Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=30.8V, Tolerance=5% Comchip Technology
7 1.5KE36CA-HF Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=30.8V, Tolerance=5% Comchip Technology
8 15KP180A Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. Panjit International Inc
9 15KP180CA Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. Panjit International Inc
10 15KW130 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
11 15KW130A 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
12 1N4751 30.0V Professional Grade 1 W Zener Diode Continental Device India Limited
13 1N4751 1 W silicon zener diode. Nominal zener voltage 30.0 V. Fairchild Semiconductor
14 1N4751A 30.0V Professional Grade 1 W Zener Diode Continental Device India Limited
15 1N5256 500 mW silicon zener diode. Nominal zener voltage 30.0 V. Fairchild Semiconductor
16 1N5256B 30.0V 500 mW Zener Diode Continental Device India Limited
17 1N5545A 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-10% tolerance. Jinan Gude Electronic Device
18 1N5545B 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-5% tolerance. Jinan Gude Electronic Device
19 1N5555 Diode TVS Single Uni-Dir 30.5V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
20 1N5610 Diode TVS Single Uni-Dir 30.5V 1.5KW 2-Pin Case G New Jersey Semiconductor
21 1N5646A Diode TVS Single Uni-Dir 30.8V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
22 1N5747B 30.0V Voltage Reference Diode Philips
23 1N6284A Diode TVS Single Uni-Dir 30.8V 1.5KW 2-Pin Case 1 New Jersey Semiconductor
24 1N759 500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). Fairchild Semiconductor
25 1N972 30.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
26 1N972 500 mW silicon planar zener diode. Max zener voltage 30.0 V. Fairchild Semiconductor
27 1N972A 30.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
28 1N972B 30.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
29 1S765H Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
30 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited


Datasheets found :: 427
Page: | 1 | 2 | 3 | 4 | 5 |



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