| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE160 |
130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2 |
1.5KE160C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
| 3 |
1.5KE300C |
Transient voltage suppressor. 1500 W. Breakdown voltage 270.0 V(min), 330.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
15KW130 |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5 |
15KW130A |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 6 |
1N4751 |
30.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 7 |
1N4751 |
1 W silicon zener diode. Nominal zener voltage 30.0 V. |
Fairchild Semiconductor |
| 8 |
1N4751A |
30.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 9 |
1N5256 |
500 mW silicon zener diode. Nominal zener voltage 30.0 V. |
Fairchild Semiconductor |
| 10 |
1N5256B |
30.0V 500 mW Zener Diode |
Continental Device India Limited |
| 11 |
1N5545A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N5545B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N5747B |
30.0V Voltage Reference Diode |
Philips |
| 14 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 15 |
1N972 |
30.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 16 |
1N972 |
500 mW silicon planar zener diode. Max zener voltage 30.0 V. |
Fairchild Semiconductor |
| 17 |
1N972A |
30.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 18 |
1N972B |
30.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 19 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 20 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 21 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 22 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 23 |
BD175 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 24 |
BD175-10 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 25 |
BD175-16 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 26 |
BD175-6 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 27 |
BD176 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 28 |
BD176-10 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 29 |
BD176-16 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 30 |
BD176-6 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
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