| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D630N2000 |
630A 2000V Power Rectifier Diode |
IPRS Baneasa |
| 2 |
D630N2200 |
630A 2200V Power Rectifier Diode |
IPRS Baneasa |
| 3 |
D630N2400 |
630A 2400V Power Rectifier Diode |
IPRS Baneasa |
| 4 |
D630N2600 |
630A 2600V Power Rectifier Diode |
IPRS Baneasa |
| 5 |
D630N2800 |
630A 2800V Power Rectifier Diode |
IPRS Baneasa |
| 6 |
MG30N2YK1 |
TRANSISTOR MODULES |
etc |
| 7 |
MG30N2YL1 |
TRANSISTOR MODULES |
etc |
| 8 |
MSAER30N20A |
N Channel MOSFET |
Microsemi |
| 9 |
MSAEZ30N20A |
N Channel MOSFET |
Microsemi |
| 10 |
MSAFR30N20A |
N Channel MOSFET |
Microsemi |
| 11 |
MSAFZ30N20A |
N Channel MOSFET |
Microsemi |
| 12 |
MT4730N2-UBL |
Visible Emitters |
Marktech Optoelectronics |
| 13 |
MTV030N201 |
On-screen-display with ayto-sizing controller |
MYSON TECHNOLOGY |
| 14 |
MTV030N202 |
On-screen-display with ayto-sizing controller |
MYSON TECHNOLOGY |
| 15 |
MTV030N24 |
On-screen-display with ayto-sizing controller |
MYSON TECHNOLOGY |
| 16 |
NTB30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 17 |
NTB30N20-D |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 18 |
NTB30N20T4 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 19 |
NTB30N20T4G |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 20 |
NTP30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
| 21 |
NTP30N20-D |
Power MOSFET 30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
| 22 |
R3130N20EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 23 |
R3130N20EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 24 |
R3130N21EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.1V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 25 |
R3130N21EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.1V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 26 |
R3130N22EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.2V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 27 |
R3130N22EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.2V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 28 |
R3130N23EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.3V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 29 |
R3130N23EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.3V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 30 |
R3130N24EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.4V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
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