| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
| 2 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 3 |
2N6083 |
NPN silicon RF power transistor 30W - 175MHz |
Motorola |
| 4 |
2SA1386 |
POWER TRANSISTORS(15A,130W) |
MOSPEC Semiconductor |
| 5 |
2SA1386A |
POWER TRANSISTORS(15A,130W) |
MOSPEC Semiconductor |
| 6 |
2SB1020 |
7A; 30W; V(ceo): 100V; PNP darlington transistor |
TOSHIBA |
| 7 |
2SB1021 |
7A; 30W; V(ceo): 80V; PNP darlington transistor |
TOSHIBA |
| 8 |
2SB1022 |
7A; 30W; V(ceo): 60V; PNP darlington transistor |
TOSHIBA |
| 9 |
2SB507 |
POWER TRANSISTORS(3.0A,60V,30W) |
MOSPEC Semiconductor |
| 10 |
2SB596 |
POWER TRANSISTORS(4.0A,80V,30W) |
MOSPEC Semiconductor |
| 11 |
2SB834 |
POWER TRANSISTORS(3.0A,60V,30W) |
MOSPEC Semiconductor |
| 12 |
2SC1030 |
Silicon Transistor NPN Triple Diffused, 20~30W Hi Fi Output |
Hitachi Semiconductor |
| 13 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 14 |
2SC3519 |
POWER TRANSISTORS(15A,130W) |
MOSPEC Semiconductor |
| 15 |
2SC3519A |
POWER TRANSISTORS(15A,130W) |
MOSPEC Semiconductor |
| 16 |
2SC3559 |
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation |
TOSHIBA |
| 17 |
2SD1088 |
POWER TRANSISTORS(6A,250V,30W) |
MOSPEC Semiconductor |
| 18 |
2SD1415 |
7A; 30W; V(ceo): 100V; NPN darlington transistor |
TOSHIBA |
| 19 |
2SD1416 |
7A; 30W; V(ceo): 80V; NPN darlington transistor |
TOSHIBA |
| 20 |
2SD1940 |
NPN Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 30W Output Applications |
SANYO |
| 21 |
2SD313 |
POWER TRANSISTORS(3A,60V,30W) |
MOSPEC Semiconductor |
| 22 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 23 |
2SD526 |
POWER TRANSISTORS(4A,80V,30W) |
MOSPEC Semiconductor |
| 24 |
2SD798 |
POWER TRANSISTORS(6A,300V,30W) |
MOSPEC Semiconductor |
| 25 |
2SD880 |
POWER TRANSISTORS(3A,60V,30W) |
MOSPEC Semiconductor |
| 26 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 27 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
| 28 |
30WQ03F |
30V 3.3A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 29 |
30WQ03FN |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 30 |
30WQ03FNTR |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
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