| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3279 |
Rectifier Diode |
Motorola |
| 2 |
1N3279 |
Diode 1KV 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 3 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 4 |
2N3279 |
Germanium PNP Transistor |
Motorola |
| 5 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 6 |
2SC3279-L |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SC3279-M |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
2SC3279-N |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 9 |
2SC3279-P |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 10 |
2SK3279 |
DC / DC ?R???o?[?^?p |
SANYO |
| 11 |
LM3279 |
Buck-Boost Converter with MIPI(R) RFFE Interface for 3G and 4G RF Power Amplifiers |
Texas Instruments |
| 12 |
LM3279TLE/NOPB |
Buck-Boost Converter with MIPI(R) RFFE Interface for 3G and 4G RF Power Amplifiers 16-DSBGA -30 to 85 |
Texas Instruments |
| 13 |
LM3279TLX/NOPB |
Buck-Boost Converter with MIPI(R) RFFE Interface for 3G and 4G RF Power Amplifiers 16-DSBGA -30 to 85 |
Texas Instruments |
| 14 |
SC3279 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| | | |
