| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1503J-35G |
Max delay 35 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 2 |
1N4735G |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 3 |
1N4935G |
1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Bytes |
| 4 |
1N4935G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER Reverse Voltage - 50 to 600 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 5 |
1N4935G |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY GLASS PASSIVATED RECTIFIER |
DC Components |
| 6 |
1N4935G |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers |
Diodes |
| 7 |
1N4935G |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS |
EIC discrete Semiconductors |
| 8 |
1N4935G |
1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Formosa MS |
| 9 |
1N4935G |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER |
GOOD-ARK Electronics |
| 10 |
1N4935G |
FAST GPP DIODES |
Leshan Radio Company |
| 11 |
1N4935G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER |
Rectron Semiconductor |
| 12 |
1N4935G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER |
Shanghai Sunrise Electronics |
| 13 |
1N4935G |
GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 50 TO 600V CURRENT: 1.0A |
Shanghai Sunrise Electronics |
| 14 |
1N4935G |
Rectifier: Fast |
Taiwan Semiconductor |
| 15 |
1N4935G-T |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers |
Diodes |
| 16 |
1N4935GL |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers |
Diodes |
| 17 |
1N4935GP |
200 V, 1 A glass passivated fast recovery rectifier |
Fagor |
| 18 |
1N4935GP |
Fast Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 19 |
1N4935GP |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER |
General Semiconductor |
| 20 |
1N4935GP |
1.0A, 200V ultra fast recovery rectifier |
MCC |
| 21 |
1N4935GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 22 |
1N4935GPE |
Diodes |
Vishay |
| 23 |
1N4935GPP |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 24 |
285D686X0035G5 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 25 |
2SB435G |
Silicon PNP epitaxial MESA transistor |
TOSHIBA |
| 26 |
2SC3935G |
Silicon NPN epitaxial planar type |
Panasonic |
| 27 |
2SC4835G |
Silicon NPN epitaxial planar type |
Panasonic |
| 28 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 29 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 30 |
3135GN-280LV |
GaN Transistors |
Microsemi |
| | | |
