| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BD135-6 |
12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD136-6 |
Continental Device India Limited |
| 2 |
BD136-6 |
12.500W Switching PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD135-6 |
Continental Device India Limited |
| 3 |
BD136-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 4 |
BD136-6 |
1.5A plastic 10W medium power silicon PNP transistor |
Motorola |
| 5 |
BD136-6 |
PNP Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 6 |
BD136-6 |
PNP SILICON TRANSISTORS |
Siemens |
| 7 |
BT136-600 |
Thyristor TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 8 |
BT136-600 |
Triacs |
Philips |
| 9 |
BT136-600D |
Triacs logic level |
Philips |
| 10 |
BT136-600E |
Thyristor TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 11 |
BT136-600E |
Triacs sensitive gate |
Philips |
| 12 |
BT136-600E-0 |
Thyristor TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB Tube |
New Jersey Semiconductor |
| 13 |
BT136-600E/02 |
BT136 series E; Triacs sensitive gate |
Philips |
| 14 |
BT136-600E/L01 |
BT136 series E; Triacs sensitive gate |
Philips |
| 15 |
BT136-600F |
Triacs |
Philips |
| 16 |
BT136-600G |
Triacs |
Philips |
| 17 |
BYX36-600 |
Rectifier diode |
mble |
| 18 |
BYX36-600 |
Low power silicon rectifier diode |
Mullard |
| 19 |
BYX36-600 |
Silicon Rectifier Diode |
Philips |
| 20 |
IS61SP6436-6PQ |
64K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 21 |
IS61SP6436-6PQI |
64K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 22 |
IS61SP6436-6TQ |
64K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 23 |
IS61SP6436-6TQI |
64K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 24 |
M50436-689SP |
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER |
Mitsubishi Electric Corporation |
| 25 |
MCR1336-6 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 26 |
MUAD16K136-66B272C |
66MHz 1M and 2M ternary CAM |
MUSIC Semiconductors |
| 27 |
MUAD8K136-66B272C |
66MHz 1M ternary CAM |
MUSIC Semiconductors |
| 28 |
SN74ACT2236-60 |
-0.5 to 7 V, 16.7 MHz, 1024 x 9 x 2 asynchronous first-in first-out memory |
Texas Instruments |
| 29 |
SN74ACT2236-60FN |
1024 x 9 x 2 Asynchronous Bidirectional FIFO Memory 44-PLCC -40 to 85 |
Texas Instruments |
| 30 |
T2527N036-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 36 kHz. |
Atmel |
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