| No. |
Part Name |
Description |
Manufacturer |
| 1 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 2 |
23A025 |
CW Class A/AB > 1 GHz |
Microsemi |
| 3 |
381LQ682M063A022 |
105 C Compact, High-Ripple Snap-in |
etc |
| 4 |
EC3A02T |
Junction FETs |
SANYO |
| 5 |
ECSP1006-3 |
EC3A02T |
SANYO |
| 6 |
ECSP1006-3T |
EC3A02T |
SANYO |
| 7 |
ECSP1006-T |
EC3A02T |
SANYO |
| 8 |
S1T8513A02 |
FM IF RECEIVER Data Sheet |
Samsung Electronic |
| 9 |
S1T8513A02-V0B0 |
FM IF RECEIVER |
Samsung Electronic |
| 10 |
W523A020 |
Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (20 sec) |
Winbond Electronics |
| 11 |
W523A025 |
Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (25 sec) |
Winbond Electronics |
| 12 |
XP133A0245SR |
Power MOS FET |
Torex Semiconductor |
| 13 |
ZXMN3A02N8 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 14 |
ZXMN3A02N8 |
N-channel MOSFET |
Zetex Semiconductors |
| 15 |
ZXMN3A02N8TA |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 16 |
ZXMN3A02N8TC |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 17 |
ZXMN3A02X8 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 18 |
ZXMN3A02X8 |
N-channel MOSFET |
Zetex Semiconductors |
| 19 |
ZXMN3A02X8TA |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| | | |
