No. |
Part Name |
Description |
Manufacturer |
1 |
1N5389 |
Rectifier Diode 40000V 0.1A |
Motorola |
2 |
84000012A |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
3 |
8400001EA |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
4 |
8400001FA |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
5 |
84000022A |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
6 |
8400002EA |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
7 |
8400002FA |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
8 |
CG1A240000 |
Reed Relay, CG Type |
Cosmo Electronics |
9 |
CXP740000 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
10 |
D1A240000 |
Reed Relay, D Type |
Cosmo Electronics |
11 |
D1B240000 |
Reed Relay, D Type |
Cosmo Electronics |
12 |
D1C240000 |
Reed Relay, D Type |
Cosmo Electronics |
13 |
D2A240000 |
Reed Relay, D Type |
Cosmo Electronics |
14 |
DH1A240000 |
Reed Relay, D Type |
Cosmo Electronics |
15 |
FAR-C4CL-40000-K02-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
16 |
FAR-C4CL-40000-K12-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
17 |
FAR-C4CL-40000-M02-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
18 |
FAR-C4CL-40000-M12-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
19 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
20 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
21 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
22 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
23 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
24 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
25 |
MAX40-140.0C |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
26 |
MAX40-140.0CA |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
27 |
MAX40-150.0C |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
28 |
MAX40-150.0CA |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
29 |
MDE-34S102K |
1000V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
30 |
MDE-34S112K |
1100V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
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