| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5389 |
Rectifier Diode 40000V 0.1A |
Motorola |
| 2 |
84000012A |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 3 |
8400001EA |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 4 |
8400001FA |
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 5 |
84000022A |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 6 |
8400002EA |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 7 |
8400002FA |
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 8 |
CG1A240000 |
Reed Relay, CG Type |
Cosmo Electronics |
| 9 |
CXP740000 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 10 |
D1A240000 |
Reed Relay, D Type |
Cosmo Electronics |
| 11 |
D1B240000 |
Reed Relay, D Type |
Cosmo Electronics |
| 12 |
D1C240000 |
Reed Relay, D Type |
Cosmo Electronics |
| 13 |
D2A240000 |
Reed Relay, D Type |
Cosmo Electronics |
| 14 |
DH1A240000 |
Reed Relay, D Type |
Cosmo Electronics |
| 15 |
FAR-C4CL-40000-K02-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
| 16 |
FAR-C4CL-40000-K12-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
| 17 |
FAR-C4CL-40000-M02-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
| 18 |
FAR-C4CL-40000-M12-R |
Piezoelectric Resonator (24 to 40 MHz) |
Fujitsu Microelectronics |
| 19 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 20 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 21 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 22 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 23 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 24 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 25 |
MAX40-140.0C |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 26 |
MAX40-140.0CA |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 27 |
MAX40-150.0C |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 28 |
MAX40-150.0CA |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 29 |
MDE-34S102K |
1000V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
| 30 |
MDE-34S112K |
1100V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
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