| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4104A |
Diode Zener Single 10V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2 |
FSB44104A |
Motion SPM� 45 LV Series |
Fairchild Semiconductor |
| 3 |
GS74104A |
4Mb Async SRAMs |
GSI Technology |
| 4 |
GS74104AJ-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 5 |
GS74104AJ-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 6 |
GS74104AJ-12 |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 7 |
GS74104AJ-12I |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 8 |
GS74104AJ-7 |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 9 |
GS74104AJ-8 |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 10 |
GS74104AJ-8I |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 11 |
GS74104ATP-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 12 |
GS74104ATP-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 13 |
GS74104ATP-12 |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 14 |
GS74104ATP-12I |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 15 |
GS74104ATP-15 |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 16 |
GS74104ATP-15I |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 17 |
GS74104ATP-7 |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 18 |
GS74104ATP-7I |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 19 |
GS74104ATP-8 |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 20 |
GS74104ATP-8I |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 21 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 22 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 23 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 24 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 25 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 26 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 27 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 28 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 29 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 30 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
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