| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM5TW-2412D |
5 WATT DC-DC CONVERTERS |
etc |
| 2 |
AM5TW-2412DH35 |
5 WATT DC-DC CONVERTERS |
etc |
| 3 |
BQ78412DDWR |
Pb-Acid Battery State-of-Charge Indicator With Run-Time Display 44-HTSSOP -40 to 85 |
Texas Instruments |
| 4 |
BQ78412DDWT |
Pb-Acid Battery State-of-Charge Indicator With Run-Time Display 44-HTSSOP -40 to 85 |
Texas Instruments |
| 5 |
D2412D |
12A Fast-Recovery Silicon Rectifier 400V |
RCA Solid State |
| 6 |
D2412D-R |
12A Fast-Recovery Silicon Rectifier 400V, reverse polarity |
RCA Solid State |
| 7 |
DG412DJ |
Monolithic Quad SPST / CMOS Analog Switches |
Intersil |
| 8 |
DG412DJ |
Improved / Quad / SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 9 |
DG412DJ+ |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 10 |
DG412DK |
Improved / Quad / SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 11 |
DG412DY |
Monolithic Quad SPST / CMOS Analog Switches |
Intersil |
| 12 |
DG412DY |
Improved / Quad / SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 13 |
DG412DY+ |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 14 |
DG412DY+C30206 |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 15 |
DG412DY+T |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 16 |
DG412DY-T |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 17 |
DRV8412DDW |
6A Dual Brushed DC or Single Bipolar Stepper Motor Driver (PWM Ctrl) 44-HTSSOP -40 to 85 |
Texas Instruments |
| 18 |
DRV8412DDWR |
6A Dual Brushed DC or Single Bipolar Stepper Motor Driver (PWM Ctrl) 44-HTSSOP -40 to 85 |
Texas Instruments |
| 19 |
E412D |
Driver, short circuit proof, tri-state output |
RFT |
| 20 |
FP412D250 |
Differential Magneto Resistor |
Infineon |
| 21 |
FP412D250 |
Differential Magneto Resistor |
Siemens |
| 22 |
G8QN-1C412DC |
Sub-Miniature Automotive PCB Relay |
Omron |
| 23 |
HDF2412D |
3 Watt HD Series |
Shindengen |
| 24 |
HIM032412D |
3 W DC/DC HIM module with 9-36 V input, +/-12 V/+/-125 mA output |
HN Electronic Components |
| 25 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 26 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 27 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 28 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 29 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 30 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| | | |
