| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4332 |
Zener Diode 16V 1W |
Motorola |
| 2 |
1N4332 |
Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
| 3 |
1N4332A |
Zener Diode 16V 1W |
Motorola |
| 4 |
1N4332A |
Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
| 5 |
1N4332B |
Zener Diode 16V 1W |
Motorola |
| 6 |
1N4332B |
Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
| 7 |
2N4332 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 8 |
2SC4332 |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 9 |
2SC4332-Z |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 10 |
905X5433200 |
3.5V to 28V Input, 3.5A, 1MHz Step-Down Converter with Eco-mode 8-SO PowerPAD -40 to 150 |
Texas Instruments |
| 11 |
AV4332E |
21, 32, 43, 65 and 87 Seconds Complicate Pure Speech |
Aplus Integrated Circuits |
| 12 |
BU4332F |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 13 |
BU4332F-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 14 |
BU4332FVE |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 15 |
BU4332FVE-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 16 |
BU4332G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 17 |
BU4332G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 18 |
CXP84332 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 19 |
CXP84332M |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 20 |
EL4332 |
Multiplexer, Triple, Analog Video, 2:1, 300MHz, Fixed Gain=2 |
Intersil |
| 21 |
EL4332C |
Triple 2:1 300 MHz Mux-Amp AV =2 |
Elantec Semiconductor |
| 22 |
EL4332CS |
Triple 2:1 300 MHz Mux-Amp AV =2 |
Elantec Semiconductor |
| 23 |
EXBU14332JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 24 |
EXBU24332JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 25 |
EXBU34332JV |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 26 |
HD6433258F10 |
QFP |
Hitachi Semiconductor |
| 27 |
HD6433258P10 |
ELECTRICAL SPECIFICATIONS |
Hitachi Semiconductor |
| 28 |
HMS81C4332 |
ROM/RAM size: 32 K/512 bytes, 4.5-5.5 V , 4-8 MHz,8-bit single-chip microcontroller |
Hynix Semiconductor |
| 29 |
IRFB4332 |
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 30 |
IRFB4332PBF |
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| | | |
