| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4435B |
Diode Rectifier Bridge Single 400V 10A |
New Jersey Semiconductor |
| 2 |
5962H3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 3 |
5962H3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 4 |
5962H3829435BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 5 |
5962H3829435BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 6 |
5962H3829435BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 7 |
5962H3829435BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 8 |
5962R3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 9 |
5962R3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 10 |
5962R3829435BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 11 |
5962R3829435BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 12 |
5962R3829435BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 13 |
5962R3829435BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 14 |
ADR435B |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
Analog Devices |
| 15 |
ADR435BR |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
Analog Devices |
| 16 |
ADR435BR-REEL7 |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
Analog Devices |
| 17 |
CYM74P435B |
null : SRAM Modules |
Cypress |
| 18 |
CYM74P435BPM-66C |
null : SRAM Modules |
Cypress |
| 19 |
FDMC4435BZ |
-30V P-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
| 20 |
FDMS4435BZ |
P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 21 |
FDS4435BZ |
-30V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 22 |
FDS4435BZ_F085 |
-30V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 23 |
S-8435BF-SB-T1 |
Step up switching regulator |
Epson Company |
| 24 |
S-8435BF-SB-T2 |
Step up switching regulator |
Epson Company |
| 25 |
SI4435BDY |
P-Channel 30-V (D-S) MOSFET |
Vishay |
| 26 |
SI9435BDY |
P-Channel 30-V (D-S) MOSFET |
Vishay |
| 27 |
SI9435BDY-T1 |
P-Channel 30-V (D-S) MOSFET |
Vishay |
| 28 |
TK11435BX |
VOLTAGE REGULATOR WITH ON/OFF SWITCH |
TOKO |
| 29 |
TSM4435BCS |
Discrete Devices-MOSFET-Single P-Channel |
Taiwan Semiconductor |
| | | |
