| No. |
Part Name |
Description |
Manufacturer |
| 1 |
KM44C256B-10 |
100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 2 |
KM44C256B-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 3 |
KM44C256B-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 4 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 5 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 6 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 7 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 8 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 9 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 10 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 11 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 12 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 13 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 14 |
KM44C256D-7 |
60ns; V(cc/in/out): -1.0 to 7.0V; 358mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 15 |
KM44C256D-8 |
60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 16 |
MCM44C256B |
4MB R4000 Secondary Cache Fast Static RAM Module Set |
Motorola |
| 17 |
MCM44C256BSG12 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 18 |
MCM44C256BSG15 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 19 |
MCM44C256BSG17 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 20 |
SMJ44C251B |
262144 by 4-bit multiport vodeo RAM |
Austin Semiconductor |
| 21 |
SMJ44C251B-10 |
262144 by 4-bit multiport video RAM |
Austin Semiconductor |
| 22 |
SMJ44C251B-12 |
262144 by 4-bit multiport video RAM |
Austin Semiconductor |
| 23 |
SMJ44C256-10 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 24 |
SMJ44C256-12 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 25 |
SMJ44C256-14 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 26 |
SMJ44C256-15 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 27 |
SMJ44C256-80 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 28 |
TPS544C25 |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
| 29 |
TPS544C25RVFR |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
| 30 |
TPS544C25RVFT |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
| | | |
