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Datasheets for 4CJ

Datasheets found :: 101
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
1 ADC0844CJ 4.5 V to 6.0 V, 5 mA, 8-bit uP compatible A/D converter with multiplexer option National Semiconductor
2 DG304CJ CMOS Analog Switchs MAXIM - Dallas Semiconductor
3 DG384CJ General Purpose CMOS Analog Switches MAXIM - Dallas Semiconductor
4 DG444CJ Improved / Quad / SPST Analog Switches MAXIM - Dallas Semiconductor
5 DG444CJ+ Improved, Quad, SPST Analog Switches MAXIM - Dallas Semiconductor
6 DM2504CJ Successive Approximation Registers National Semiconductor
7 DS2004CJ High Current/Voltage Darlington Drivers National Semiconductor
8 DS96F174CJ EIA-485/EIA-422 Quad Differential Drivers [Life-time buy] National Semiconductor
9 ICL7664CJA 500mW; V(in): -18V; programmable negative voltage regulator MAXIM - Dallas Semiconductor
10 IH5044CJE General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
11 IH5144CJE High-Level CMOS Analog Switches Intersil
12 IH5144CJE Low Power Fast CMOS Analog Switches MAXIM - Dallas Semiconductor
13 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
14 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
15 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
16 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
17 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
18 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
19 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
20 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
21 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
22 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
23 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
24 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
25 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
26 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
27 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
28 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
29 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
30 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic


Datasheets found :: 101
Page: | 1 | 2 | 3 | 4 |



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