| No. |
Part Name |
Description |
Manufacturer |
| 1 |
4E100-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 2 |
4E100-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 3 |
4E100A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 4 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 5 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 6 |
AS4C4M4E1Q |
4M x 4 CMOS QuadCAS DRAM (EDO) family |
Alliance Semiconductor |
| 7 |
AS4LC4M4E1 |
4M x 4 CMOS DRAM (EDO) Family |
Alliance Semiconductor |
| 8 |
BR24E16 |
I2C BUS compatible serial EEPROM |
ROHM |
| 9 |
BR24E16F |
I2C BUS compatible serial EEPROM |
ROHM |
| 10 |
BR24E16FJ |
I2C BUS compatible serial EEPROM |
ROHM |
| 11 |
BR24E16FV |
I2C BUS compatible serial EEPROM |
ROHM |
| 12 |
CY14E101J2-SXI |
1-Mbit (128 K � 8) Serial (I2C) nvSRAM |
Cypress |
| 13 |
CY14E101J2-SXIT |
1-Mbit (128 K � 8) Serial (I2C) nvSRAM |
Cypress |
| 14 |
CY14E101Q1A-SXI |
1-Mbit (128 K � 8) Serial (SPI) nvSRAM |
Cypress |
| 15 |
CY14E101Q1A-SXIT |
1-Mbit (128 K � 8) Serial (SPI) nvSRAM |
Cypress |
| 16 |
CY14E101Q2A-SXI |
1-Mbit (128 K � 8) Serial (SPI) nvSRAM |
Cypress |
| 17 |
CY14E101Q2A-SXIT |
1-Mbit (128 K � 8) Serial (SPI) nvSRAM |
Cypress |
| 18 |
CY14E116L-ZS25XI |
16-Mbit (2048 K � 8/1024 K � 16/512 K � 32) nvSRAM |
Cypress |
| 19 |
CY14E116L-ZS25XIT |
16-Mbit (2048 K � 8/1024 K � 16/512 K � 32) nvSRAM |
Cypress |
| 20 |
CY14E116N-Z30XI |
16-Mbit (2048 K � 8/1024 K � 16/512 K � 32) nvSRAM |
Cypress |
| 21 |
CY14E116N-Z30XIT |
16-Mbit (2048 K � 8/1024 K � 16/512 K � 32) nvSRAM |
Cypress |
| 22 |
GP1A44E1 |
Transmissive Type Photointerrupter with Actuator |
SHARP |
| 23 |
IDB04E120 |
Silicon Power Diodes - 4A EmCon in TO263 |
Infineon |
| 24 |
IDP04E120 |
Silicon Power Diodes - 4A EmCon in TO220-2 |
Infineon |
| 25 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 26 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 27 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 28 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 29 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 30 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
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