| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE100A |
85.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2 |
1.5KE100A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=85.5V, Tolerance=5% |
Comchip Technology |
| 3 |
1.5KE100A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=85.5V, Tolerance=5% |
Comchip Technology |
| 4 |
1.5KE100CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 85.50 V. Test current IT = 1 mA. |
Bytes |
| 5 |
1.5KE100CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=85.5V, Tolerance=5% |
Comchip Technology |
| 6 |
1.5KE100CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=85.5V, Tolerance=5% |
Comchip Technology |
| 7 |
10AM20 |
TRANS GP BJT 50V 5.5A 3(55AT) |
New Jersey Semiconductor |
| 8 |
15KP130A |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 9 |
15KP130CA |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 10 |
1N3984 |
5.5V 10W Zener Diode |
Motorola |
| 11 |
1N416B |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 12 |
1N416C |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 13 |
1N416D |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 14 |
1N416E |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 15 |
1N416F |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 16 |
1N416G |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 17 |
1N5629 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 18 |
1N5657A |
Diode TVS Single Uni-Dir 85.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 19 |
1N5945 |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N5945A |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N5945C |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N5945D |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N6036 |
Diode TVS Single Bi-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 24 |
1N6036B |
Diode TVS Single Bi-Dir 5.5V 15KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
| 25 |
1N6267 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 26 |
1N6295A |
Diode TVS Single Uni-Dir 85.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 27 |
1S221 |
Silicon junction zener diode 1W 5.5V |
TOSHIBA |
| 28 |
1S263 |
Silicon junction zener diode 10W 5.5V |
TOSHIBA |
| 29 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 30 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
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