| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FDB075N15A |
N-Channel PowerTrench� MOSFET 150V, 130A, 7.5m? |
Fairchild Semiconductor |
| 2 |
FDB075N15A_F085 |
N-Channel Power Trench� MOSFET 150V, 110A, 7.5m? |
Fairchild Semiconductor |
| 3 |
FDH055N15A |
N-Channel PowerTrench� MOSFET 150V, 167A, 5.9m? |
Fairchild Semiconductor |
| 4 |
FDP075N15A |
N-Channel PowerTrench� MOSFET 150V, 130A, 7.5m? |
Fairchild Semiconductor |
| 5 |
FQB45N15V2 |
150V N-Channel Advanced QFET V2 series |
Fairchild Semiconductor |
| 6 |
FQB45N15V2TM |
150V N-Channel Advanced QFET V2 series |
Fairchild Semiconductor |
| 7 |
FQB5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 8 |
FQB5N15TM |
150V N-Channel QFET |
Fairchild Semiconductor |
| 9 |
FQD5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 10 |
FQD5N15TF |
150V N-Channel QFET |
Fairchild Semiconductor |
| 11 |
FQD5N15TM |
150V N-Channel QFET |
Fairchild Semiconductor |
| 12 |
FQI45N15V2 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 13 |
FQI5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 14 |
FQI5N15TU |
150V N-Channel QFET |
Fairchild Semiconductor |
| 15 |
FQP45N15V2 |
150V N-Channel Advanced QFET V2 series |
Fairchild Semiconductor |
| 16 |
FQP5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 17 |
FQPF45N15V2 |
150V N-Channel Advanced QFET V2 series |
Fairchild Semiconductor |
| 18 |
FQPF5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 19 |
FQU5N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 20 |
H5N1503P |
Transistors>Switching/MOSFETs |
Renesas |
| 21 |
H5N1506P |
Transistors>Switching/MOSFETs |
Renesas |
| 22 |
KT865N15 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .220 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . |
Optek Technology |
| 23 |
KT875N15 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches |
Optek Technology |
| 24 |
MTM45N15 |
Trans MOSFET N-CH 50V 45A |
New Jersey Semiconductor |
| 25 |
MTP15N15 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 26 |
MTW35N15E |
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
Motorola |
| 27 |
MTW35N15E |
OBSOLETE - Power MOSFET 35 Amps, 150 Volts |
ON Semiconductor |
| 28 |
MTW35N15E-D |
Power MOSFET 35 Amps, 150 Volts N-Channel TO-247 |
ON Semiconductor |
| 29 |
NTB35N15 |
Power MOSFET 37 Amps, 150 Volts |
ON Semiconductor |
| 30 |
NTB35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
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