| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE110CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 106.0 V(min), 116 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE120CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 114.0 V(min), 126 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 4 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 5 |
15KP210 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 6 |
15KP210C |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 7 |
15KP220A |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 8 |
15KP220A |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 9 |
15KP220CA |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 10 |
15KP220CA |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 11 |
1617AB15 |
15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz |
GHz Technology |
| 12 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 13 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 14 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 15 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 16 |
1N3287 |
6 V, 200 mA, gold bonded germanium diode |
BKC International Electronics |
| 17 |
1N3287WUSN |
6 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 18 |
1N3822 |
Zener regulator diode. Nom zener voltage 3.6 V. 1 W. |
Motorola |
| 19 |
1N3827 |
Zener regulator diode. Nom zener voltage 5.6 V. 1 W. |
Motorola |
| 20 |
1N4621UR-1 |
3.6 volt zener diode |
Compensated Devices Incorporated |
| 21 |
1N4626UR-1 |
5.6 volt zener diode |
Compensated Devices Incorporated |
| 22 |
1N4729 |
3.6 V, 1 W silicon zener diode |
BKC International Electronics |
| 23 |
1N4729 |
1 W silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 24 |
1N4729 |
1 WATT, 3.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 25 |
1N4729A |
3.6 V, 1 W silicon zener diode |
BKC International Electronics |
| 26 |
1N4729A |
Voltage regulator diode. Working voltage (nom) 3.6 V . |
Philips |
| 27 |
1N4734 |
5.6 V, 1 W silicon zener diode |
BKC International Electronics |
| 28 |
1N4734 |
1 W silicon zener diode. Nominal zener voltage 5.6 V. |
Fairchild Semiconductor |
| 29 |
1N4734 |
1 WATT, 5.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 30 |
1N4734A |
5.6 V, 1 W silicon zener diode |
BKC International Electronics |
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