| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP130 |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. |
Panjit International Inc |
| 2 |
15KP130C |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. |
Panjit International Inc |
| 3 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 4 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 5 |
1G-65 |
TRANSITRON 1G65 OUTLINE |
Transitron Electronic |
| 6 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 7 |
1N34 |
65 Volt Germanium Diode |
Micro Commercial Components |
| 8 |
1N34A |
65 Volt Germanium Diode |
Micro Commercial Components |
| 9 |
1N5355B |
18 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 10 |
1N5356B |
19 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 11 |
1N5357B |
20 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 12 |
1N635 |
165 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 13 |
1N773 |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 14 |
1N773A |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 15 |
24FC32 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 Instead |
Microchip |
| 16 |
27C1024 |
1 Megabit (65 K x 16-Bit) CMOS EPROM |
Advanced Micro Devices |
| 17 |
2N3765 |
Type 2N3765 Geometry 6706 Polarity PNP |
Semicoa Semiconductor |
| 18 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 19 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 20 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 21 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 22 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 23 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 24 |
5962-0150601HXA |
Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning |
Analog Devices |
| 25 |
5962-9961601HXA |
Dual Channel, 14-Bit, 65 MSPS A/D Converter With Analog Input Signal Conditioning |
Analog Devices |
| 26 |
7341 |
T-1 3/4 subminiature, miniature flanged lamp. 28.0 volts, 0.065 amps. |
Gilway Technical Lamp |
| 27 |
7356 |
T-1 3/4 subminiature, miniature grooved lamp. 28.0 volts, 0.065 amps. |
Gilway Technical Lamp |
| 28 |
8098 |
T-1 subminiature, bi-pin lamp. 14.0 volts, 0.065 amps. |
Gilway Technical Lamp |
| 29 |
8111 |
T-1 subminiature, wire lead lamp. 14.0 volts, 0.065 amps. |
Gilway Technical Lamp |
| 30 |
8112 |
T-1 subminiature, miniature flanged lamp. 14.0 volts, 0.065 amps. |
Gilway Technical Lamp |
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