| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 2 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 3 |
1672G |
1672G Standalone Logic Analyzer with 500 MHz Timing/150 MHz State, 68 Channels, 128K Memory |
Agilent (Hewlett-Packard) |
| 4 |
1682A |
1682A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 5 |
1682AD |
1682AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
| 6 |
1692A |
1692A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 7 |
1692AD |
1692AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
| 8 |
1N4760A |
68 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 9 |
1N4765 |
Low-level temperature-compensated zener reference diode. Max voltage 0.068 V. |
Motorola |
| 10 |
1N4770 |
Low-level temperature-compensated zener reference diode. Max voltage 0.068 V. |
Motorola |
| 11 |
1N5266A |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 12 |
1N5266AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. Tolerance +-10%. |
Microsemi |
| 13 |
1N5266BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. Tolerance +-5%. |
Microsemi |
| 14 |
1N5266C |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 15 |
1N5266D |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 16 |
1N5266UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. |
Microsemi |
| 17 |
1N5373B |
68 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 18 |
1N5373B |
68 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 19 |
1N5945 |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N5945A |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N5945B |
68 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 22 |
1N5945C |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N5945D |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N6291 |
68 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 25 |
1N6291A |
68 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 26 |
1N6291C |
68 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 27 |
1N6291CA |
68 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 28 |
1N981A |
68 V, zener diode |
Leshan Radio Company |
| 29 |
1SMA4760 |
68 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 30 |
1SMA5913BT3 |
PLASTIC SURFACE MOUNT ZENER DIODES 1.5 WATTS 3.3-68 VOLTS |
Motorola |
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