| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 2 |
15KP110CA |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 3 |
15KP160 |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 4 |
15KP160C |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 5 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 6 |
1N3825 |
Zener regulator diode. Nom zener voltage 4.7 V. 1 W. |
Motorola |
| 7 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N4371B |
2.7 V, 20 mA, zener diode |
Leshan Radio Company |
| 9 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N4371C |
2.7 V, 20 mA, zener diode |
Leshan Radio Company |
| 11 |
1N4371D |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N4371D |
2.7 V, 20 mA, zener diode |
Leshan Radio Company |
| 13 |
1N4618UR-1 |
2.7 volt zener diode |
Compensated Devices Incorporated |
| 14 |
1N4624UR-1 |
4.7 volt zener diode |
Compensated Devices Incorporated |
| 15 |
1N4732 |
4.7 V, 1 W silicon zener diode |
BKC International Electronics |
| 16 |
1N4732 |
1 W silicon zener diode. Nominal zener voltage 4.7 V. |
Fairchild Semiconductor |
| 17 |
1N4732 |
1 WATT, 4.7 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 18 |
1N4732A |
4.7 V, 1 W silicon zener diode |
BKC International Electronics |
| 19 |
1N4732A |
Voltage regulator diode. Working voltage (nom) 4.7 V . |
Philips |
| 20 |
1N4750 |
27 V, 1 W silicon zener diode |
BKC International Electronics |
| 21 |
1N4750 |
1 WATT, 27 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 22 |
1N4750A |
27 V, 1 W silicon zener diode |
BKC International Electronics |
| 23 |
1N4750A |
27 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 24 |
1N4756A |
47 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 25 |
1N4768 |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 26 |
1N4769A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 27 |
1N4773 |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 28 |
1N4774A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 29 |
1N4779A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 30 |
1N4784A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
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