| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP120A |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 2 |
15KP120CA |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 3 |
15KP160A |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 4 |
15KP160CA |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 5 |
15KP220 |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A. |
Panjit International Inc |
| 6 |
15KP220C |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A. |
Panjit International Inc |
| 7 |
1SMZG06GP |
0.8 A Surface Mounted Glass Passivated Bridge |
Fagor |
| 8 |
1SMZG10GP |
0.8 A Surface Mounted Glass Passivated Bridge |
Fagor |
| 9 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 10 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 11 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 12 |
2017 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
| 13 |
2032 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
| 14 |
28F160F3 |
FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
Intel |
| 15 |
28F800F3 |
FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
Intel |
| 16 |
29104BJA |
2K x 8 Asynchronous CMOS Static RAM |
Intersil |
| 17 |
29110BJA |
2K x 8 Asynchronous CMOS Static RAM |
Intersil |
| 18 |
2N2222AHR |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 19 |
2N2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 20 |
2N2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 21 |
2N2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 22 |
2N2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 23 |
2N2222ARUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 24 |
2N2222ARUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 25 |
2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 26 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 27 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 28 |
2N5065 |
400 V, 0.8 A sensitive SCR |
Teccor Electronics |
| 29 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
| 30 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
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