No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE150A |
128.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1.5KE150CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 128.00 V. Test current IT = 1 mA. |
Bytes |
3 |
1.5KE170 |
138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
4 |
1.5KE170C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
5 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
6 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
7 |
1N6382 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
8 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
9 |
278.001 |
Axial Lead and Cartridge Fuses |
Littelfuse |
10 |
278.002 |
Axial Lead and Cartridge Fuses |
Littelfuse |
11 |
278.003 |
Axial Lead and Cartridge Fuses |
Littelfuse |
12 |
278.004 |
Axial Lead and Cartridge Fuses |
Littelfuse |
13 |
278.005 |
Axial Lead and Cartridge Fuses |
Littelfuse |
14 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
15 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
16 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
17 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
18 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
19 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
20 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
21 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
22 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
23 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
24 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
25 |
30R400 |
Resettable PTC. Ihold = 4.00A, Itrip = 8.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
26 |
BD201 |
60.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD202 |
Continental Device India Limited |
27 |
BD202 |
60.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD201 |
Continental Device India Limited |
28 |
BD203 |
60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 |
Continental Device India Limited |
29 |
BD204 |
60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD203 |
Continental Device India Limited |
30 |
BD533 |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
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