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Datasheets for 8.00

Datasheets found :: 240
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1.5KE150A 128.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
2 1.5KE150CA 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 128.00 V. Test current IT = 1 mA. Bytes
3 1.5KE170 138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
4 1.5KE170C 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. Bytes
5 1N6374 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
6 1N6378 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
7 1N6382 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
8 1N6386 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
9 278.001 Axial Lead and Cartridge Fuses Littelfuse
10 278.002 Axial Lead and Cartridge Fuses Littelfuse
11 278.003 Axial Lead and Cartridge Fuses Littelfuse
12 278.004 Axial Lead and Cartridge Fuses Littelfuse
13 278.005 Axial Lead and Cartridge Fuses Littelfuse
14 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
15 30KW108 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
16 30KW108A 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
17 30KW168 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
18 30KW168A 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
19 30KW198 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
20 30KW198A 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
21 30KW258 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
22 30KW258A 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
23 30KW288 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
24 30KW288A 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
25 30R400 Resettable PTC. Ihold = 4.00A, Itrip = 8.00A, Vmax =30Vdc. Reel quantity 1500. Littelfuse
26 BD201 60.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD202 Continental Device India Limited
27 BD202 60.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD201 Continental Device India Limited
28 BD203 60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 Continental Device India Limited
29 BD204 60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD203 Continental Device India Limited
30 BD533 50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. Continental Device India Limited


Datasheets found :: 240
Page: | 1 | 2 | 3 | 4 | 5 |



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