Datasheets for 8030B

Datasheets found :: 17 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	APT8030B2VFR	POWER MOS V 800V 27A 0.300 Ohm	Advanced Power Technology
2	APT8030B2VFRG	FREDFETs	Microsemi
3	APT8030B2VR	POWER MOS V 800V 27A 0.300 Ohm	Advanced Power Technology
4	APT8030B2VRG	MOSFET	Microsemi
5	KM416S8030B	2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
6	KM416S8030BT-G/F10	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
7	KM416S8030BT-G/F8	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
8	KM416S8030BT-G/FA	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
9	KM416S8030BT-G/FH	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
10	KM416S8030BT-G/FL	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
11	MRF18030B	MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
12	MRF18030B	MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
13	MRF18030B	MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
14	MRF18030BLR3	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
15	MRF18030BLSR3	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
16	MRF18030BR3	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
17	MRF18030BSR3	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)

Datasheets found :: 17 Page: | 1 |