| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1024-60LH/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 2 |
1032-60LG/883 |
High-Density Programmable Logic |
Lattice Semiconductor |
| 3 |
150K/883C2 |
Diode Switching 800V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 4 |
1N1883 |
Zener Diode 39V 1W |
Motorola |
| 5 |
1N2883 |
Signal Diode |
Motorola |
| 6 |
1N3883 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 7 |
1N3883 |
400V Fast Recovery Diode in a DO-203AA (DO-4) package |
International Rectifier |
| 8 |
1N3883 |
Fast Rectifier (100-500ns) |
Microsemi |
| 9 |
1N3883 |
Fast recovery silicon rectifier diode |
Motorola |
| 10 |
1N3883 |
Rectifier Diode 6A |
Motorola |
| 11 |
1N3883 |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
| 12 |
1N3883 |
6A Fast-Recovery Silicon Rectifier 400V |
RCA Solid State |
| 13 |
1N3883 |
Silicon rectifier diode - fast recovery series |
SESCOSEM |
| 14 |
1N3883 |
400 V, 6 A fast recovery rectifier |
Solid State Devices Inc |
| 15 |
1N3883 |
Fast Recovery Rectifier |
Transitron Electronic |
| 16 |
1N3883A |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
| 17 |
1N3883E3 |
Fast Rectifier (100-500ns) |
Microsemi |
| 18 |
1N3883R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 19 |
1N3883R |
Fast Rectifier (100-500ns) |
Microsemi |
| 20 |
1N3883R |
6A Fast-Recovery Silicon Rectifier, reverse-polarity 400V |
RCA Solid State |
| 21 |
1N3883RE3 |
Fast Rectifier (100-500ns) |
Microsemi |
| 22 |
1N4883 |
3 WATT GLASS ZENER DIODES |
Microsemi |
| 23 |
1N4883 |
Zener Diode 12V 3W |
Motorola |
| 24 |
1N883 |
Rectifier Diode 400V |
Motorola |
| 25 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 26 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 27 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
| 28 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 29 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 30 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
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