| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT38N60BC6 |
MOSFET |
Microsemi |
| 2 |
APT38N60SC6 |
MOSFET |
Microsemi |
| 3 |
D358N600 |
358A 600V Power Rectifier Diode |
IPRS Baneasa |
| 4 |
D408N600 |
408A 600 Power Rectifier Diode |
IPRS Baneasa |
| 5 |
FDPF8N60ZUT |
N-Channel UniFETTM Ultra FRFETTM MOSFET 600V, 6.5A, 1.35? |
Fairchild Semiconductor |
| 6 |
FQB8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 7 |
FQB8N60CF |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 8 |
FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 9 |
FQI8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 10 |
FQI8N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 11 |
FQP8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 12 |
FQPF8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 13 |
FQPF8N60CF |
N-Channel QFET� FRFET� MOSFET 600V, 6.26A, 1.5? |
Fairchild Semiconductor |
| 14 |
IRFPS38N60L |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package |
International Rectifier |
| 15 |
IXGH28N60BD1 |
Low VCE(sat) IGBT with Diode |
IXYS Corporation |
| 16 |
IXGT28N60BD1 |
Low VCE(sat) IGBT with Diode |
IXYS Corporation |
| 17 |
KF8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 18 |
KF8N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 19 |
KP8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 20 |
KP8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 21 |
KPS8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 22 |
KPS8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 23 |
MCPF08N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 24 |
MTP8N60 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 25 |
MTW8N60E |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Motorola |
| 26 |
MTW8N60E |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
ON Semiconductor |
| 27 |
MTW8N60E-D |
Power MOSFET 8 Amps, 600 Volts N-Channel TO-247 |
ON Semiconductor |
| 28 |
MTW8N60E/D |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Motorola |
| 29 |
NDF08N60Z |
Power MOSFET 600V 0.95 Ohm Single N-Channel |
ON Semiconductor |
| 30 |
STB18N60M2 |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
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