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Datasheets for 90

Datasheets found :: 1298
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No. Part Name Description Manufacturer
1 08090 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Infineon
2 10500 500 W, 50 V, 1030-1090 MHz common base transistor GHz Technology
3 1090MP 90 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
4 1504-90E Delay 90 +/-4.5 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
5 1505-90A Delay 90 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 Data Delay Devices Inc
6 1513-90Y Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 Data Delay Devices Inc
7 1514-90Y Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 Data Delay Devices Inc
8 1515-90A Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 Data Delay Devices Inc
9 15KP190 Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. Panjit International Inc
10 15KP190A Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. Panjit International Inc
11 15KP190C Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. Panjit International Inc
12 15KP190CA Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. Panjit International Inc
13 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology
14 1920A12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
15 1920A20 20 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
16 1920AB12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
17 1920AB25 25 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
18 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
19 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
20 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
21 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
22 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
23 1N265 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
24 1N3769 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
25 1N4690 (DO35) Zener Voltage Regulator Diode Microsemi
26 1N476 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
27 1N477 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
28 1N479 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
29 1N490 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
30 1N5280AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. Tolerance +-10%. Microsemi


Datasheets found :: 1298
Page: | 1 | 2 | 3 | 4 | 5 |



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