| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ENA2209 |
N-Channel IGBT 400V, 150A, VCE(sat); 3.8V Single ECH8 |
ON Semiconductor |
| 2 |
KA2209 |
Dual Low Voltage Power Amplifier |
Samsung Electronic |
| 3 |
KA2209 |
Dual Low Voltage Power Amplifier |
Samsung Electronic |
| 4 |
KA2209B |
DUAL LOW VOLTAGE POWER AMP |
Samsung Electronic |
| 5 |
OPA2209 |
2.2nV/rtHz, 18MHz, Precision, RRO, 36V Operational Amplifier |
Texas Instruments |
| 6 |
OPA2209AID |
2.2nV/rtHz, 18MHz, Precision, RRO, 36V Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
| 7 |
OPA2209AIDGKR |
2.2nV/rtHz, 18MHz, Precision, RRO, 36V Operational Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
| 8 |
OPA2209AIDGKT |
2.2nV/rtHz, 18MHz, Precision, RRO, 36V Operational Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
| 9 |
OPA2209AIDR |
2.2nV/rtHz, 18MHz, Precision, RRO, 36V Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
| 10 |
S1A2209A01 |
DUAL LOW VOLTAGE POWER AMP |
Samsung Electronic |
| 11 |
S1A2209A01 |
DUAL LOW VOLTAGE POWER AMP Data Sheet |
Samsung Electronic |
| 12 |
S1A2209A01-D0B0 |
DUAL LOW VOLTAGE POWER AMP |
Samsung Electronic |
| 13 |
S1A2209A01-S0B0 |
DUAL LOW VOLTAGE POWER AMP |
Samsung Electronic |
| | | |
