| No. |
Part Name |
Description |
Manufacturer |
| 1 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
| 2 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 3 |
13PD100-ST |
The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... |
Anadigics Inc |
| 4 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
| 5 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 6 |
13PD150-ST |
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... |
Anadigics Inc |
| 7 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
| 8 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 9 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 10 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 11 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 12 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 13 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 14 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 15 |
2SK2685 |
GaAs HEMT |
Hitachi Semiconductor |
| 16 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 17 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 18 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 19 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 20 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 21 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 22 |
3SK147 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 23 |
3SK148 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 24 |
3SK149 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 25 |
3SK165 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 26 |
3SK165A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 27 |
3SK165A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 28 |
3SK165A-1 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 29 |
3SK166 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 30 |
3SK166A |
GaAs N-channel Dual Gate MES FET |
SONY |
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